pFusion：A promising embedded NVM solution and a pioneer in PMOS NVM technology since 1995.

v  Key Features

–   Patented p-channel, 2 transistors traditional floating gate flash cell

–   Small bit cell and macro size

–   For high density embedded products, e.g. 4K to 2M Bytes

–   Fastest P/E

–   Fast and low power read

–   10 years after 100K

–   Flexibly configured with flash, EEPROM, or both

 

pFusion Cell Operation

 

v Program

–   Band to band tunneling

–   Low Power Consumption (<0.1uA/cell program current)

–   High speed programming (< 20us/word)

v Erase

–   FN tunneling, Erase time < 2ms

v Read

–   Fast access time (20ns or even below)

–   Low power consumption (< 60uA/MHz)

v Free of hot hole injection

–   Solid data retention > 10 years

–   High endurance & reliability > 100K cycles

 

pFusion Technology Roadmap

 

 

 

pFusion shipment quantity

–   > 1,000,000 8” wafers for 0.18/0.16um

–   > 100,000 8” wafers for 0.13/0.11um

–   > 40,000 12” wafers for 55nm

 

pFusion Technology Prowess

v  Simplicity 

–   Same flash cell structure from 0.35um to 28nm   

–   No difficult modules, low technology development cost

–   Fast learning curve/ ramp-up, easy to achieve good yield   

v  Low manufacturing cost  

–   Very competitive bit cell and macro size

–   Low mask count  

–   Very short test time (multi-DUT and multi-byte program) 

v  High reliability, quality & performance

–   Full temperature range    

–   High endurance cycling

–   Very comprehensive test coverage, high quality, low PPM     

–   Versatile macro design from high performance to low cost

v  Strong local support team   

–   Most experienced engineering team in Asia, DE/TD/PE/TE