產品與技術

pFusion (Embedded Flash)

產品與技術

pFusion (Embedded Flash)

Technology

產品簡介

Features

  • Innovator of pioneering pFusion® architecture P-channel based 2 transistors embedded flash
  • Best endurance, solid data retention, fast program/erase and read speed at temp. range of -40oC to +125oC.
  • Logic compatible, scalable and small macro area

Advantages

  • Lower process challenge
    >Consistent classic ETOX floating gate structure
    > Minimal effort for process development
    >Proved solution and short development time
  • Higher C/P
    >Lower process cost
    >Competitive macro/cell size
    >Shortest test time, build-in serial test interface to minimize test time
  • Flash macros validation
    >Platform macros are fully characterized, and also abundant resource to support customized macros design

IP List

產品資訊

0.11um LL eFlash Macros

DensityConfigurationPage sizeInfor. BlockVDDStandby current (typ./max.)Access timeread current
8Kbytex8512byte256byte x 21.35V~1.65V1uA/10uA40ns150uA/MHz
16Kbytex8512byte256byte x 21.35V~1.65V1uA/10uA40ns150uA/MHz
16Kbytex8512byte512byte x 41.45V~1.65V1uA/20uA30ns300uA/MHz
16Kbytex16512byte256byte x 21.35V~1.65V1uA/10uA40ns200uA/MHz
32Kbytex8512byte256byte x 21.35V~1.65V1uA/10uA40ns150uA/MHz
32Kbytex161Kbyte1Kbyte x 21.35V~1.65V1uA/10uA40ns200uA/MHz
32Kbytex16/x321Kbyte1Kbyte x 21.35V~1.65V1uA/10uA40ns250uA/MHz
32Kbytex16/x321Kbyte1Kbyte x 21.45V~1.65V1uA/20uA30ns300uA/MHz
36Kbytex16/x321Kbyte256byte x 21.35V~1.65V1uA/10uA40ns250uA/MHz
64Kbytex8512byte512byte x 21.35V~1.65V1uA/10uA40ns250uA/MHz
64Kbytex161Kbyte1Kbyte x 21.35V~1.65V1uA/10uA40ns250uA/MHz
64Kbytex16/x321Kbyte1Kbyte x 21.35V~1.65V1uA/10uA40ns250uA/MHz
64Kbytex16/x321Kbyte1Kbyte x 41.45V~1.65V1uA/10uA30ns250uA/MHz
64Kbytex321Kbyte1Kbyte x 81.35V~1.65V0.5uA/20uA25ns 90uA/MHz
64Kbytex391Kbyte1Kbyte x 81.35V~1.65V0.5uA/20uA25ns 100uA/MHz
64Kbytex641Kbyte1Kbyte x 41.45V~1.65V1uA/10uA30ns350uA/MHz
64Kbytex721Kbyte1Kbyte x 101.35V~1.65V1uA/20uA40ns440uA/MHz
128Kbytex8512byte256byte x 21.35V~1.65V1uA/10uA40ns150uA/MHz
128Kbytex16/x321Kbyte256byte x 21.35V~1.65V1uA/10uA40ns250uA/MHz
128Kbytex641Kbyte1Kbyte x 81.35V~1.65V1uA/10uA40ns300uA/MHz
128Kbytex321Kbyte1Kbyte x 81.35V~1.65V0.5uA/20uA25ns 90uA/MHz
128Kbytex1281Kbyte1Kbyte x 81.35V~1.65V0.5uA/20uA25ns 150uA/MHz
256Kbytex16/x321Kbyte1Kbyte x 41.35V~1.65V1uA/10uA40ns250uA/MHz
256Kbytex641Kbyte1Kbyte x 81.35V~1.65V1uA/10uA40ns300uA/MHz
256Kbytex321Kbyte1Kbyte x 81.35V~1.65V0.5uA/20uA25ns 90uA/MHz
256Kbytex391Kbyte1Kbyte x 81.35V~1.65V0.5uA/20uA25ns 100uA/MHz
256Kbytex1281Kbyte1Kbyte x 81.35V~1.65V0.5uA/20uA25ns 150uA/MHz

0.11um ULL eFlash Macros

DensityConfigurationPage sizeInfor. BlockVDDStandby current (typ./max.)Access timeread current
16Kbytex8512byte512byte x 21.35V~1.65V0.5uA/5uA40ns150uA/MHz
32Kbytex8512byte512byte x 21.35V~1.65V0.5uA/5uA40ns150uA/MHz
32Kbytex161Kbyte1Kbyte x 21.35V~1.65V0.5uA/5uA40ns200uA/MHz
32Kbytex16/x321Kbyte1Kbyte x 21.35V~1.65V0.5uA/5uA40ns250uA/MHz
64Kbytex161Kbyte1Kbyte x 21.35V~1.65V0.5uA/5uA40ns200uA/MHz
64Kbytex16/x321Kbyte1Kbyte x 21.35V~1.65V0.5uA/5uA40ns250uA/MHz
64Kbytex391Kbyte1Kbyte x 21.35V~1.65V0.5uA/5uA30ns300uA/MHz
64Kbytex641Kbyte1Kbyte x 41.45V~1.65V0.5uA/5uA30ns350uA/MHz
128Kbytex8512byte256byte x 21.35V~1.65V0.5uA/5uA40ns150uA/MHz
128Kbytex16/x321Kbyte256byte x 21.35V~1.65V0.5uA/5uA40ns250uA/MHz
512Kbytex1281Kbyte1Kbyte x 161.35V~1.65V0.5uA/5uA40ns450uA/MHz

0.18um eFlash Macros

DensityConfigurationPage sizeInfor. BlockVDDStandby current (typ./max.)
Access timeRead cycleread current
8Kbytex81Kbyte256byte x 11.62V~1.98V1uA/20uA40ns50ns150uA/MHz
16Kbytex81Kbyte256byte x 11.62V~1.98V1uA/20uA40ns50ns150uA/MHz
16Kbytex161Kbyte256byte x 11.62V~1.98V1uA/20uA40ns50ns150uA/MHz
32Kbytex81Kbyte256byte x 11.62V~1.98V1uA/20uA40ns50ns150uA/MHz
32Kbytex161Kbyte256byte x 11.62V~1.98V1uA/20uA40ns50ns150uA/MHz
64Kbytex81Kbyte256byte x 11.62V~1.98V1uA/20uA40ns50ns150uA/MHz
64Kbytex161Kbyte256byte x 11.62V~1.98V1uA/20uA40ns50ns150uA/MHz
128Kbytex81Kbyte256byte x 11.62V~1.98V1uA/20uA40ns50ns150uA/MHz
128Kbytex161Kbyte256byte x 11.62V~1.98V1uA/20uA40ns50ns150uA/MHz

55nm eFlash Macros

DensityConfigurationPage sizeInfor. BlockVDDSleep current (typ./max.)
Access timeread current (typ./max) MHz
32Kbytex32512byte512byte x 41.08V~1.32V3uA/30uA25ns 50uA/80uA
96Kbytex32512byte512byte x 41.08V~1.32V3uA/30uA25ns 50uA/80uA
228Kbytex32512byte512byte x 41.08V~1.32V3uA/30uA25ns 50uA/80uA
256Kbytex32512byte512byte x 41.08V~1.32V3uA/30uA25ns 50uA/80uA
256Kbytex64512byte512byte x 41.08V~1.32V0.3uA/3uA25ns 80uA/120uA
256Kbytex1281Kbyte1Kbyte x 41.08V~1.32V0.3uA/3uA25ns 120uA/180uA
256Kbytex1441Kbyte1Kbyte x 81.08V~1.32V0.3uA/3uA25ns 130uA/200uA
512Kbytex321Kbyte1Kbyte x 41.08V~1.32V0.3uA/3uA25ns60uA/100uA
512Kbytex39512byte512byte x 81.08V~1.32V0.3uA/3uA25ns80uA/120uA
512Kbytex1281Kbyte1Kbyte x 41.08V~1.32V0.3uA/3uA25ns160uA/240uA
512Kbytex1441Kbyte1Kbyte x 81.08V~1.32V0.3uA~3uA25ns180uA/270uA

0.15um BCD eFlash Macros :

DensityConfigurationPage sizeInfor. BlockVDDStandby current (typ./max.)
Access timeRead cycleRead current
64Kbytex161Kbyte256byte x 11.6V~2.0V1uA/160uA40ns50ns200uA
64Kbytex391Kbyte1Kbyte x 21.6V~2.0V1uA/160uA40ns50ns350uA
96Kbytex161Kbyte256byte x 11.6V~2.0V1uA/160uA40ns50ns200uA